| 1 |
Influence of Passivation-Layer Thickness on Stability of Amorphous InGaZnO Thin Film Transistors
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会议论文 |
Chengyuan Dong|Jie Hu|Yuting Chen|Haiting Xie| |
| 2 |
Influences of Nitrogen Doping on the ElectricalCharacteristics of Indium-Zinc-Oxide Thin Film Transistors
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期刊论文 |
Yun-chu Tsai|Yan Li|Qun Zhang|Han-Ping D. Shieh| |
| 3 |
Investigation of tungsten-doped indium oxide thin film based diodes and TFTs
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会议论文 |
Qun Zhang|Pu H|Yue L|Yang M| |
| 4 |
Enhancing the hole injection and transporting of organic light-emitting diodes by utilizing gradient doping
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期刊论文 |
Jiang Wang|Jun Liu|Saijun Huang|Gufeng He| |
| 5 |
Ambient effect on thermal stability of amorphousInGaZnO thin film transistors
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期刊论文 |
Haiting Xie|Guochao LIU|Lei Zhang|Chengyuan Dong| |
| 6 |
Effect of annealing temperature on solution-processed Al-doped IZO thin film transistors
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会议论文 |
HAIFENG PU|HONGLEI LI|SHUJIAN PANG|QUN ZHANG| |
| 7 |
Development of source/;drain electrodes for amorhoous indium gallium zinc oxide htin film tansistors
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会议论文 |
RUNZE ZHAN|CHENG-LUNG CHIANG|POLIN CHEN|TZU-CHIEH LAI| |
| 8 |
Transparent conductive indium zinc oxide films prepared by pulsed plasma deposition
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期刊论文 |
Runlai Wan|Ming Yang|Qianfei Zhou|Qun Zhang| |
| 9 |
Amorphous InGaZnOThin Film Transistors with Sputtered Silver Electrodes
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会议论文 |
Shan Li|Chang-Cheng Lo|A. Lien|Chengyuan Dong| |
| 10 |
Stability study of indium tungsten oxide thin-filmtransistors annealed under various ambient conditions
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期刊论文 |
Chih-Hsiang Chang|Ting Meng|Qu Zhang|Po-Tsun Liu| |
| 11 |
Amorphous InGaZnO Thin Film Transistors with SputteredSilver Source/Drain and Gate Electrodes
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期刊论文 |
Ling Xu|Jianeng Xu|Haiting Xie|Chengyuan Dong| |
| 12 |
Dip-coated Al-In-Zn-O thin-film transistor with poly-mehylmethacrylate gate dielectric
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期刊论文 |
HaiFeng Pu|Honglei Li|ShuJian Pang|Qun Zhang| |
| 13 |
Solution-processed Indium-Zinc-Oxide thin film transistors with high-k magnesium Titanium oxide dielectric
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期刊论文 |
Can Cui|Li Zhang|Chengyuan Dong|Qun Zhang| |
| 14 |
Nitrogenated Amorphous SnSiO Thin Film Transistor
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会议论文 |
Jianwen Yang|Ruofan Fu|Jinhua Ren|Qun Zhang| |
| 15 |
Improved efficiency of blue phosphorescence organic ligh-emitting diodes with irregular stepwise-doping emitting layers
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期刊论文 |
J. WANG|S.HUANG|HA CHEN|G. HE| |
| 16 |
Stability of Amorphous Indium–Tungsten Oxide Thin-FilmTransistors Under Various Wavelength Light Illumination
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期刊论文 |
Zhao Yang|Ting Meng|Qun Zhang|Han-Ping D. Shieh| |
| 17 |
Nitrogen-Doped Amorphous Oxide Semiconductor Thin FilmTransistors with Double-Stacked Channel Layers
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期刊论文 |
Ling Xu|Lei Zhang|Guochao Liu|Chengyuan Dong| |
| 18 |
Effect of content ratio on solution-processed high-k Tianium-Aluminum oxide dielectric films
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期刊论文 |
Zhao Yang|Qianfei ZHou|Chengyuan Dong|Qun Zhang| |
| 19 |
Characteristic of Bismuth-Doped Tin Oxide Thin-FilmTransistors
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期刊论文 |
Yanbin Han|Roufan Fu|Ting Meng|Qun Zhang| |
| 20 |
Preparation and characterization ofmolybdenum-doped indium-zinc-oxide thinfilm transistors
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期刊论文 |
NaiQian Wang|MingYue Qu|HaiFeng Pu|Qun Zhang| |
| 21 |
Improvements in passivation effect of amorphous InGaZnO thin film transistors
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期刊论文 |
Zhe Hu|Haiting Xie|Runze Zhan|Zhongfei Zou| |
| 22 |
Sputtered oxides usedfor passivation layers of amorphous InGaZnO thin film transistors
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期刊论文 |
Daxiang Zhou|Zhe Hu|Haiting Xie|Chengyuan Dong| |
| 23 |
Solution-processed high-k tianium doped aluminum oxide dielectrics
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会议论文 |
HONGLEI LI|ZHANG YANG|QIANFEI ZHOU|QUN ZHANG| |
| 24 |
H2O Induced Hump Phenomenon in Capacitance-Voltage Measurementsof a-IGZO Thin Film Transistors
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期刊论文 |
Janwen Yang|Ming-Yen Tsai|Ting-Chang Chang|Qun Zhang| |
| 25 |
Influenceof Channel Layer Thickness on SnSiO Thin Film Transistor
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会议论文 |
Ruofan Fu|Jianwen Yang|Jinhua Ren|Qun Zhang| |
| 26 |
High efficiency OLEDs based on the grdient doping in transporting layer
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会议论文 |
Z. YE|J. LU|Y. SU|G. HE| |
| 27 |
Influenceof oxygen flow rates on the performance of a-IWO-TFTs and the stability underlight illumination
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会议论文 |
Qun Zhang|Nidhi Tiwar|Po-Tsun Liu|Han-Ping Shieh| |
| 28 |
Thermal Stability ofAmorphous InGaZnO Thin Film Transistors with Different Oxygen-Contained Active Layers
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期刊论文 |
Po-Lin Chen|Tzu-Chieh Lai|Chang-Cheng Lo|A. Lien| |
| 29 |
Improved efficency roll-off at high brightness in simplified phosphorescent organic light emitting diodes with a crossfading-host
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期刊论文 |
XINKAI WU|XINDONG SHI|GUFENG HE|YOUXUAN ZHENG| |
| 30 |
Effect of active layer thickness on device performance of a-LZTO thin film transistors
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期刊论文 |
HAIFENG PU|HONGLEI LI|SHUJIAN PANG|QUNG ZHANG| |
| 31 |
Process development of inverted-staggered amorphous InGaZnO thin film transistors with wet-etched electrodes
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期刊论文 |
Po-Lin Chen|Tzu-Chieh Lai|Chang-Cheng Lo|A. Lien| |
| 32 |
Enhancing the hole injection and transporting of organic light-emitting diodes by utilizing gradent doping
|
期刊论文 |
J. Wang|J. Liu|S. Huang|G. He| |
| 33 |
Modulation of interface and bulk states in amorphous InGaZnO thin film transistors with double stacked channel layers
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期刊论文 |
Runze Zhan|Chengyuan DONG|Boru Yang|Han-Ping D. Shieh| |
| 34 |
Effects of silicon doping on the performance of tin oxidethin film transistors
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期刊论文 |
Ting Meng|Yanbing Han|Xiaotian Wang|Qun Zhang| |
| 35 |
Light Illumination Stability of Amorphous InGaZnO Thin Film Transistors with Sputtered AlOx Passivation in Various Thicknesses
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期刊论文 |
Qi Wu|Ling Xu|Haiting Xie|Chengyuan Dong| |
| 36 |
Ambienteffects on the light illumination stability of amorphous InGaZnO thin filmtransistors
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会议论文 |
Guochao Liu|Lei Zhang|Xianyu Tong|Chengyuan Dong| |
| 37 |
Double hybrid tadem white OLED employing novel charge generation unit
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会议论文 |
J.LU|Y. SU|G. HE|C. H. CHEN| |
| 38 |
Preapatation an properties of Mo-doped Indium Zinc Oxide htin film transistor
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会议论文 |
ZHAO YANG|NAIQIAN WANG|QUN ZHANG| |
| 39 |
Influence of Tungsten Doping on the performance of Indium Zinc Oxide Thin Film Transistors
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期刊论文 |
Honglei Li|Mingyue Qu|Qun Zhang| |
| 40 |
Transparent p-type conducting K-doped NiO films deposited by pulsed plasma deposition
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期刊论文 |
Ming Yang|Haifeng Pu|Qianfei Zou|Qun Zhang| |
| 41 |
Comparative study of amorphous indium gallium zinc oxide thin film transistors passivated by sputtered non-stoichiometric aluminum and titanium oxide layers
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期刊论文 |
Po-Lin Chen|Tzu-Chieh Lai|Chang-cheng Lo|A. lien| |
| 42 |
Thermal Stability ofAmorphous InGaZnO Thin Film Transistors Passivated by AlOx Layers
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期刊论文 |
Yuting Chen|Jie Wu|Haiting Xie|Chengyuan Dong| |
| 43 |
Investigationof indium oxide based thin film transistors with tungsten as dopant
|
会议论文 |
Qun Zhang| |
| 44 |
Influence of channel layer and passivation layer on the stabvility of amorphous InGaZnO thin film tansistors
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期刊论文 |
Runze ZHAN|CHENGYUAN DONG|POTSUN LIU|Han-Ping D. Shieh| |
| 45 |
AmorphousOxide Thin Film Transistors with Nitrogen-doped Active Layers
|
会议论文 |
Jianeng Xu|Lei Zhang|Guochao Liu|Chengyuan Dong| |
| 46 |
Improved efficiency of blue phosphorescence organic light-emitting diodes with irregular stepwise-doping emitting layers
|
期刊论文 |
Jing Wang|Saijun Huang|Hsi-An Chen|Gufeng He| |
| 47 |
Thermal Stability of Amorphous InGaZnO Thin Film Transistors with Different Oxygen-Contained Active Layers
|
会议论文 |
Chengyuan Dong|Jie WU|Yuting Chen|Haiting Xie| |
| 48 |
The 5th International Symposium on Advanced Oxide Thin Films for Information and Environmental Technologies
|
会议论文 |
Qun Zhang| |
| 49 |
Investigation of tungsten doped tin oxidethin film transistors
|
期刊论文 |
Ting Meng|Zhao Yang|Can Cui|Qun Zhang| |
| 50 |
The stability of tin silicon oxide thin-filmtransistors with different annealing temperatures
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期刊论文 |
R. Fu|Y. Han|T. Meng|Q. Zhang| |
| 51 |
Study on Channel Layers and High Dielectric Layers for Oxide TFTs
|
会议论文 |
Qun Zhang| |
| 52 |
Annealing ProcessDevelopment for Amorphous InWO Thin Film Transistors
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会议论文 |
Haiting Xie|Jianeng Xu|Qun Zhang|Chengyuan Dong| |
| 53 |
Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing
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期刊论文 |
HAIFENG PU|QIANFEI ZHOU|LANYUE|QUN ZHANG| |
| 54 |
Improvements in passivaiton effect of amorphous InGaZnO thin film transistors
|
期刊论文 |
ZHE HU|HAITING XIE|RUNZE ZHAN|ZHONGFEI ZOU| |
| 55 |
Top-gate LZTO thin-film transistors with PMMA gate insulator by solution process
|
期刊论文 |
Haifeng Pu|Shujian Pang|Honglei Li|Qun Zhang| |
| 56 |
Influenceof oxygen flow rates on the performance of a-IWO-TFTs and the stability underlight illumination
|
会议论文 |
Qun Zhang|Nidhi Tiwar|Po-Tsun Liu|Han-Ping Shieh| |
| 57 |
Preparationof amorphous indium zinc oxide and tungsten doped indium oxide double-layerthin film transistors
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会议论文 |
Mingyue Qu|Qun Zhang|Po-Tsun Liu|Han-Ping D. Shieh| |
| 58 |
High efficiency green phosphoorescent organic light-emitting diodes with a low roll-off at high brightness
|
期刊论文 |
J. LU|Y. SU|G. HE|Y. ZHENG| |
| 59 |
Amorphous InGaZnO thin film transistors with wet-etched Ag electrodes
|
期刊论文 |
Zhe Hu|Daxiang Zhou|Haiting Xie|Chengyuan Dong| |
| 60 |
Prepareation OF AMORHOUS TUNGSTEN DOPED INDIUM ZINC OXIE THIN FILM TRANSISTORS
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会议论文 |
LI HONGLEI|QU MINGYUE|ZHANG QUN| |
| 61 |
Investigation of oxygen plasma treatment on the device performance of solution-processed a-IGZO thin film transistors
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期刊论文 |
Haifeng PU|QIANFEI ZHOU|LAN YUE|QUN ZHANG| |
| 62 |
Effect of interface and bulk states on the stability of amorphous InGaZnO thin film transistors
|
会议论文 |
YUTING CHEN|JEI WU|BO-RU YANG|HAN-PING D SHIEH| |
| 63 |
Investigation onambient degradation of amorphous InGaZnO thin film transistors in an unsealedchamber
|
会议论文 |
Shan Li|Chia-Yu Lee|A. Lien|Chengyuan Dong| |
